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Pressure behavior of Te isoelectronic centers in S-rich ZnS_1-xTe_x alloyLI, G. H; FANG, Z. L; SU, F. H et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 401-406, issn 0370-1972, 6 p.Conference Paper

Auger parameter shift and extra-atomic-relaxation of ZnS_1-xTe_x alloysWONG, J. W. L; SUN, W. D; MA, Z. H et al.Journal of crystal growth. 2001, Vol 227-28, pp 688-692, issn 0022-0248Conference Paper

Raman scattering and photoluminescence of ZnS_xTe_1-x mixed crystalsLIU, N. Z; LI, G. H; ZHU, Z. M et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 18, pp 4119-4129, issn 0953-8984Article

Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS_1-xTe_x epilayers grown by hot-wall epitaxyYU, Young-Moon; NAM, Sungun; O, Byungsung et al.Applied surface science. 2001, Vol 182, Num 1-2, pp 159-166, issn 0169-4332Article

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Lateral-index-guided ZnCdSSe lasersSTRASSBURG, M; SCHULZ, O; POHL, U. W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1054-1057, issn 0022-0248Conference Paper

Influence of driving conditions on the stability of ZnSe-based cw-laser diodesKLUDE, M; FEHRER, M; GROSSMANN, V et al.Journal of crystal growth. 2000, Vol 214-15, pp 1040-1044, issn 0022-0248Conference Paper

Structural properties of ZnTe/Zn(S, Te)-superlattices grown by molecular beam epitaxy on (0 0 1) GaAs-substratesKORN, M; GERHARD, T; RESS, H. R et al.Journal of crystal growth. 1998, Vol 184-85, pp 62-65, issn 0022-0248Conference Paper

Temperature dependence of the responsivity of ZnS-based UV detectorsSOU, I. K; MA, Z. H; ZHANG, Z. Q et al.Journal of crystal growth. 2000, Vol 214-15, pp 1125-1129, issn 0022-0248Conference Paper

DX-like centers in n-type Al-doped ZnS_1-xTe_x grown by molecular-beam epitaxyLIWU LU; MAK, K. K; MA, Z. H et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 141-146, issn 0022-0248Article

The dependence of the structural and optical properties on the Te mole fraction in ZnS_1-xTe_x/GaAs heterostructuresMOON, S. J; LEE, K. H; CHOI, J. C et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 4, pp 535-538, issn 0022-3697, 4 p.Article

Stimulated and spontaneous emission in ZnS_1-xTe_x/ZnSe strain layer superlatticesWONG, K. S; WANG, H; SOU, I. K et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 689-693, issn 0022-0248Conference Paper

II-VI blue-green light emittersISHIBASHI, A.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 555-565, issn 0022-0248Conference Paper

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Improvement in lasing characteristics of II-VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructuresPETRUZZELLO, J; DRENTEN, R; GAINES, J. M et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 686-691, issn 0022-0248Conference Paper

Operation and catastrophic optical degradation of II-VI laser diodes at output powers larger than 1 WSCHULZ, O; STRASSBURG, M; NAKANO, K et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 2, pp 943-948, issn 0370-1972Conference Paper

Low threshold II-VI laser diodes with transversal and longitudinal single-mode emissionLEGGE, M; BACHER, G; FORCHEL, A et al.Journal of crystal growth. 2000, Vol 214-15, pp 1045-1048, issn 0022-0248Conference Paper

Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxyKIM, M.-D; KIM, B.-J; JEON, M.-H et al.Journal of crystal growth. 1997, Vol 175-76, pp 637-641, issn 0022-0248, 1Conference Paper

Compound-source molecular beam epitaxy for ZnCdSe/ZnCdSe/ZnSSe/ZnMgSSe laser structureOHKAWA, K; YOSHII, S; TAKEISHI, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 12A, pp L1673-L1675, issn 0021-4922, 2Article

Low-threshold buried-ridge II-VI laser diodesHAASE, M. A; BAUDE, P. F; HAGEDORN, M. S et al.Applied physics letters. 1993, Vol 63, Num 17, pp 2315-2317, issn 0003-6951Article

Blue/green light emitting diodes and laser diodes based on II-VI heterostructures grown on predeposited GaAs buffer layersREN, J; EASON, D. B; WICKS, G. W et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 955-957, issn 1071-1023Conference Paper

High-resolution X-ray diffraction study of degrading ZnSe-based laser diodesGERHARD, T; ALBERT, D; FASCHINGER, W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1049-1053, issn 0022-0248Conference Paper

Optical properties of ZnSSe/ZnMgSSe quantum wellsCHUNG, T.-Y; OH, J. H; LEE, S.-G et al.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 701-707, issn 0268-1242Article